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| Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=-2A VCB=10V, f=1MHz 2SD2561 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2561 150 150 5 17 1 200(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio, Series Regulator and General Purpose (Ta=25C) Unit External Dimensions MT-200 36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2 A A V a b 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 10 IB2 (mA) -10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ Weight : Approx 18.4g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V) 17 50mA VCE( sa t ) - IB Characteristics (Typical) 3 I C - VBE Temperature Characteristics (Typical) 17 15 (VCE=4V) 10mA A 2m 3m 1 .5 m A 15 A 1. 0m A Collector Current I C (A) 0. 8m A 2 10 Collector Current I C( A) 10 mp) e Te (Cas 25C p) Tem I C= .15A I C= .10A 1 IC=.5A (Ca C 5 I B= 0.3mA 5 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 -30C 125 (Cas e Te se mp) 0.5mA 2 2.6 Collector-Emitter Voltage V C E( V) Base Current I B( mA) Base-Emittor Voltage V B E( V) (V C E= 4V) 50000 DC C urrent G ain h FE DC Curr ent Gain h FE 50000 1 C 25 (V C E= 4V) j-a(C/W) hFE - IC Characteristics (Typical) h FE - I C Temperature Characteristics (Typical) j-a - t Characteristics 2 Typ 10000 5000 Transient Thermal Resistance 1 10000 5000 25 C 0.5 -30 C 1000 500 02 0.5 1 Collector Current I C( A) 5 10 17 1000 500 02 0.5 1 Collector Current I C( A) 5 10 17 0.1 1 10 100 Time t(ms) 1000 2000 fT - IE Characteristics (Typical) (V C E= 12V) 80 Safe Operating Area (Single Pulse) 200 P c - T a Derating Maxim um Power Dissip ation P C( W) 160 W ith Cu t-off Fr eque ncy f T( MH Z) 60 In fin 120 ite he 40 at si nk 80 20 40 Without Heatsink 0 25 50 75 100 125 150 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 5 0 Ambient Temperature Ta(C) 159 |
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